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Proceedings Paper

Enhanced amorphous silicon technology for 320 x 240 microbolometer arrays with a pitch of 35 um
Author(s): Eric Mottin; Jean-Luc Martin; Jean-Louis Ouvrier-Buffet; Michel Vilain; Astrid Bain; Jean-Jacques Yon; Jean-Luc Tissot; Jean-Pierre Chatard
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Paper Abstract

LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development for years. This technology is now in production at Sofradir and first delivery have already been done to customers. From our background in modeling and material mastering LETI/LIR concentrate now on performance enhancement. This is a key point for cost reduction due to the fact that signal to noise ratio enhancement will allow us to decrease the pitch. A new approach of packaging is also described in this paper and first results are displayed. A new technological stack of amorphous silicon fully compatible with industrial process is presented. Electro-optical results obtained from an IRCMOS 320 X 240 with 35 μm pitch are presented. NETD close to 35 mK has been obtained with our new embodiment of amorphous silicon microbolometer technology.

Paper Details

Date Published: 10 October 2001
PDF: 7 pages
Proc. SPIE 4369, Infrared Technology and Applications XXVII, (10 October 2001); doi: 10.1117/12.445293
Show Author Affiliations
Eric Mottin, CEA-LETI (France)
Jean-Luc Martin, CEA-LETI (France)
Jean-Louis Ouvrier-Buffet, CEA-LETI (France)
Michel Vilain, CEA-LETI (France)
Astrid Bain, CEA-LETI (France)
Jean-Jacques Yon, CEA-LETI (France)
Jean-Luc Tissot, CEA-LETI (France)
Jean-Pierre Chatard, SOFRADIR (France)


Published in SPIE Proceedings Vol. 4369:
Infrared Technology and Applications XXVII
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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