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Proceedings Paper

Characterization of high-isolation rf capacitive microswitches
Author(s): Chee How Wong; M. J. Tan; J.-M. Huang; Kim Miao Liew; Ai Qun Liu
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Paper Abstract

With the recent growth of microelectromechanical systems (MEMS), RF capacitive microswitches are becoming popular. As such there is a need to accurately characterize the performance of the RF capacitive microswitches. To realize this goal, the paper proposes both electrical and static mechanical models to precisely extract the performance parameters of the RF capacitive microswitches. The electrical model proposed in this paper provides a means to represent the RF capacitive microswitches for use to determine the resistance, capacitance, and inductance. The static mechanical model predicts the effective stiffness constant and the pull-in voltage. Deformation of the bridge and its contact behavior with the dielectric layer are also precisely analyzed using Finite Element Method. Finally this paper discusses the fabrication of the RF capacitive microswitches.

Paper Details

Date Published: 18 October 2001
PDF: 12 pages
Proc. SPIE 4586, Wireless and Mobile Communications, (18 October 2001); doi: 10.1117/12.445259
Show Author Affiliations
Chee How Wong, Nanyang Technological Univ. (Singapore)
M. J. Tan, Nanyang Technological Univ. (Singapore)
J.-M. Huang, Nanyang Technological Univ. (Singapore)
Kim Miao Liew, Nanyang Technological Univ. (Singapore)
Ai Qun Liu, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 4586:
Wireless and Mobile Communications
Hequan Wu; Jari Vaario, Editor(s)

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