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Proceedings Paper

Quasioptical MESFET VCOs
Author(s): Scott Bundy; Tom Mader; Zoya Popovic; Reinold Ellinson; Dag Roar Hjelme; Marc R. Surette; Michael J. Yadlowsky; Alan Rolf Mickelson
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Paper Abstract

A gate feedback oscillator is presented which is motivated by the geometry of the monolithic MESFET device, with a monolithically integrated oscillator in GaAs. This power combining, solid state oscillator can be used as a microwave and millimeter wave source, and in most applications it needs to be tunable in both power and frequency. The tuning can be performed with a separate wafer loaded with varactor diodes, that has an electrically variable reflection coefficient, and is equivalent to a tuning short. Phase control is carried out using optical injection-locking. A single MESFET microstrip oscillator is demonstrated that is optically injection locked at 5 GHz. To characterize the nonlinearity of the device, electrooptic sampling of the gate-source voltage has been performed inside the GaAs FET in a microstrip oscillator and the saturation level has been determined at different bias points.

Paper Details

Date Published: 1 July 1991
PDF: 11 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44511
Show Author Affiliations
Scott Bundy, Univ. of Colorado/Boulder (United States)
Tom Mader, Univ. of Colorado/Boulder (United States)
Zoya Popovic, Univ. of Colorado/Boulder (United States)
Reinold Ellinson, Univ. of Colorado/Boulder (United States)
Dag Roar Hjelme, Univ. of Colorado/Boulder (United States)
Marc R. Surette, Univ. of Colorado/Boulder (United States)
Michael J. Yadlowsky, Univ. of Colorado/Boulder (United States)
Alan Rolf Mickelson, Univ. of Colorado/Boulder (United States)

Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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