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Proceedings Paper

Low-noise MMIC performance in Kaband using ion implantation technology
Author(s): J. P. Mondal; T. Contolatis; John J. Geddes; Stan E. Swirhun; Vladimir Sokolov
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Paper Abstract

The progress made in producing low noise MMICs in Ka-band using an ion-implantation technology is reviewed. The technology is characterized by 3.8 dB noise figure with 14-16 dB gain and is suitable for high volume applications where the cost is to be kept low.

Paper Details

Date Published: 1 July 1991
PDF: 5 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44510
Show Author Affiliations
J. P. Mondal, Honeywell Systems and Research Ctr. (United States)
T. Contolatis, Honeywell Systems and Research Ctr. (United States)
John J. Geddes, Honeywell Systems and Research Ctr. (United States)
Stan E. Swirhun, Honeywell Systems and Research Ctr. (United States)
Vladimir Sokolov, Honeywell Systems and Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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