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Proceedings Paper

Comparison of MESFET and HEMT MMIC technologies using a compact Kaband voltage-controlled oscillator
Author(s): Stan E. Swirhun; John J. Geddes; Vladimir Sokolov; David R. Bosch; M. J. Gawronski; Robert Anholt
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Paper Abstract

To compare the capability of MESFET and HEMT technologies for monolithic microwave integrated circuit (MMIC) implementation we have fabricated and tested discrete field-effect transistors (FETs) and a novel Ka-band monolithic voltage controlled oscillator (VCO). We implemented the circuit with three different active devices: moderate- and high-doped ion-implanted MESFETs (metal-semiconductor FETs) and AlGaAs/GaAs HEMTs (high electron mobility transistors). A comparison of the measured oscillator phase-noise and an independent comparison of the temperature dependence of MESFET and HEMT RF equivalent circuits yields two general guidelines: MESFETs are preferred over HEMTs for applications requiring low phase-noise and temperature insensitive operation.

Paper Details

Date Published: 1 July 1991
PDF: 6 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44508
Show Author Affiliations
Stan E. Swirhun, Honeywell Systems and Research Ctr. (United States)
John J. Geddes, Honeywell Systems and Research Ctr. (United States)
Vladimir Sokolov, Honeywell Systems and Research Ctr. (United States)
David R. Bosch, Alliant Techsystems (United States)
M. J. Gawronski, Alliant Techsystems (United States)
Robert Anholt, Gateway Modeling (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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