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Proceedings Paper

Effects of radiation on millimeter wave monolithic integrated circuits
Author(s): Andrew Meulenberg; Hing-Loi A. Hung; J. L. Singer; Wallace T. Anderson
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Paper Abstract

Radiation damage to high-electron-mobility transistor (HEMT) structures, and its effect on electrical characteristics, are discussed. Radiation from cobalt 60 gamma and nuclear reactor sources was used on microwave and millimeter-wave monolithic circuits to determine total dose sensitivity. Heavy ions (15-MeV silicon) were used to evaluate other potential damage mechanisms. The dc and RF results for a 60-GHz-band monolithic microwave integrated circuit (MMIC) before and after irradiation are presented. The HEMT structures were found to be as resistant to radiation as previously tested metal-semiconductor field-effect transistors (MESFETs), and no new damage mechanisms were observed.

Paper Details

Date Published: 1 July 1991
PDF: 6 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44506
Show Author Affiliations
Andrew Meulenberg, COMSAT Labs. (United States)
Hing-Loi A. Hung, COMSAT Labs. (United States)
J. L. Singer, COMSAT Labs. (United States)
Wallace T. Anderson, Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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