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Proceedings Paper

Insertion of emerging GaAs HBT technology in military and communication system applications
Author(s): Bridget A. McAdam; Arvind K. Sharma; Barry R. Allen; M. Kintis
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Paper Abstract

This paper presents design and test results of balanced I-band amplifiers realized using GaAs HBT and MESFET technology. Their performance comparison in terms of linearity figure of merit demonstrates that the HBT MMICs can provide high third-order intercept point (IP3) with low dc power consumption. It also provides simplified system architecture requiring only a single dc supply voltage.

Paper Details

Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44504
Show Author Affiliations
Bridget A. McAdam, TRW, Inc. (United States)
Arvind K. Sharma, TRW, Inc. (United States)
Barry R. Allen, TRW, Inc. (United States)
M. Kintis, TRW, Inc. (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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