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Proceedings Paper

Design and fabrication of polarization-insensitive 1550-nm semiconductor optical amplifiers
Author(s): Lijuan Yu; Wei-Hua Guo; Yongzhen Huang
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Paper Abstract

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

Paper Details

Date Published: 19 October 2001
PDF: 7 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.445012
Show Author Affiliations
Lijuan Yu, Institute of Semiconductors (China)
Wei-Hua Guo, Institute of Semiconductors (China)
Yongzhen Huang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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