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Proceedings Paper

Temperature dependence of gain in multiple-layer quantum dots
Author(s): Yongqiang Ning; Xin Gao; Lijun Wang; Peter M. Smowton; Peter Blood
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Paper Abstract

The multiple layers quantum dots structure was grown by MBE technology. The temperature dependence of the modal gain of quantum dots was investigated by using the single pass amplified spontaneous emission method. The incorporation of extra layers of quantum dots didn't lead to an increase of the modal loss, inferring that the free carrier absorption in the doped cladding layers might dominate the loss mechanism. The peak modal gain exhibited an increase with temperature in the region of 140K to 200K, presumably due to the non-equilibrium distribution of carriers among the quantum dots.

Paper Details

Date Published: 19 October 2001
PDF: 4 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.445007
Show Author Affiliations
Yongqiang Ning, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Xin Gao, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Peter M. Smowton, Cardiff Univ. (United Kingdom)
Peter Blood, Cardiff Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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