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Proceedings Paper

980-nm high-power semiconductor lasers
Author(s): Xin Gao; Yi Qu; Hui Li; Baoxue Bo
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Paper Abstract

In this paper we report a 980 nm InGaAs/GaAs MQW semiconductor laser array. The epilayer structures are grown by MBE. We have fabricated broad areas lasers with a cavity length of 1000micron and a stripe width of 6micron and a stripe spacing of 100micron. The measurements are performed in quasi-continuous wave mode (QCW). The highest QCW output power of 12W for laser array with coated facets is achieved. The threshold current density is 400 A/cm2 at 15degree. The slope efficiency is 0.74W/A. The lasing spectrum is peaked at 979.4 nm with a FWHM of 3nm.

Paper Details

Date Published: 19 October 2001
PDF: 3 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.445006
Show Author Affiliations
Xin Gao, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Yi Qu, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Hui Li, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Baoxue Bo, Changchun Institute of Optics, Fine Mechanics, and Physics (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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