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Proceedings Paper

Dependence of threshold current density on the stacked quantum dot layers
Author(s): Yongqiang Ning; Xin Gao; Yun Liu; Lijun Wang; Peter M. Smowton; Peter Blood
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Paper Abstract

Lasers based on InGaAs/(Ga,Al)As stacked QDs layers are fabricated. The performance of the quantum dots laser is dependent on the detailed design of the active region. The threshold current density is greatly decreased by the use of multiple-layer quantum dots, coupled dots layers, or barriers with wide band gap. An average threshold current density of about 20A/cm2 is achieved for the laser with the width of 15micron.

Paper Details

Date Published: 19 October 2001
PDF: 4 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.445005
Show Author Affiliations
Yongqiang Ning, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Xin Gao, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Yun Liu, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics, and Physics (China)
Peter M. Smowton, Cardiff Univ. (United Kingdom)
Peter Blood, Cardiff Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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