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Proceedings Paper

Band lineup calculations for strained InGaAs(P)/InP quantum well structures
Author(s): Dejun Han; Chao Liu; K. T. Chan
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Paper Abstract

We use empirical equations verified indirectly by experimental results in first priority to calculate band lineup and other parameters related to optical gain calculations for strained InGaAsP/InP quantum well (QW) structures, the parameters without such known empirical equations are calculated by interpolation scheme from binary or ternary compound that consists the quaternary alloys. This approach may sacrifice the systematical feature but the results are more accurate.

Paper Details

Date Published: 19 October 2001
PDF: 5 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.445001
Show Author Affiliations
Dejun Han, Beijing Normal Univ. (China)
Chao Liu, Beijing Normal Univ. (China)
K. T. Chan, The Chinese Univ. of Hong Kong (Hong Kong)

Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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