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Proceedings Paper

Characteristic study of InAs self-assembled quantum dots on GaAs/InP
Author(s): Jingzhi Yin; Xinqiang Wang; Zongyou Yin; Zhengting Li; Mingtao Li; Yi Qu; Guotong Du; Shuren Yang
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Paper Abstract

In the paper, a thin tensile GaAs interlayer was used to get regular arrangement of InAs quantum dots (QDs) on InP substrate by LP-MOCVD. Photoluminescence (PL) spectrum, atomic force microscopy (AFM) image and Raman spectrum have been investigated. The five band k(DOT)p formalism in the PL spectrum and frequency shift in Raman spectrum have been performed. The theoretical calculations coincide with our experiment results well. The density of InAs quantum dots at 4 ML InAs is the maximum (1.6X1010cmMIN2).

Paper Details

Date Published: 19 October 2001
PDF: 7 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444993
Show Author Affiliations
Jingzhi Yin, Jilin Univ. (China)
Xinqiang Wang, Jilin Univ. (China)
Zongyou Yin, Jilin Univ. (China)
Zhengting Li, Jilin Univ. (China)
Mingtao Li, Jilin Univ. (China)
Yi Qu, Jilin Univ. (China)
Guotong Du, Jilin Univ. (China)
Shuren Yang, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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