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Proceedings Paper

Dynamics of interface traps in bonded silicon wafers
Author(s): Sina Khorasani; Alireza Motieifar; Bizhan Rashidian
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Paper Abstract

In this article, a time-domain non-linear model is proposed for quantum dynamics of interface traps. This model includes the effects of thermoionic emission, combined with the drift and tunneling currents. The model is simplified for the case of interface traps of the directly bonded Silicon wafers, and linearized. Therefore, an equivalent electrical circuit is obtained being composed of two resistive and capacitive branches. The theory predicts a close spacing between the corresponding zero and pole in the frequency response of the system, being justified by experiment on directly bonded n- type Silicon wafers. The low frequency response to a square- wave is quite in agreement with the experiment. This method enables one to precisely measure the filling up time- constant of the interface traps through the falling electroncs from the conduction band, by measuring the frequency response of the interface.

Paper Details

Date Published: 19 October 2001
PDF: 8 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444987
Show Author Affiliations
Sina Khorasani, Sharif Univ. of Technology (United States)
Alireza Motieifar, Sharif Univ. of Technology (Iran)
Bizhan Rashidian, Sharif Univ. of Technology (Iran)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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