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Proceedings Paper

Important aspects of volume NLO crystal growth for optoelectronic devices
Author(s): Eugene G. Tsvetkov; Victor I. Tyurikov; Vladimir N. Semenenko
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Paper Abstract

Some aspects of growth of volume nonlinear-optical KTP and BBO single crystals, specific features of formation of their real structure and its characteristics have been studied. They can be governed by such phenomena as formation and restructuring of adsorption layers at the interface of crystal growth, their possible directing and screening effect on solution-melt clusters, mechanism of formation of the polarity of crystal structure, etc. The most important factor is the tendency to form antipolar structures of these crystals, caused by internal energy reasons. It is shown that for developing efficient technological processes for production of this type of crystals, in addition to the above factors, real processes of temperature-time changes in structure and properties of complex solution-melt crystallization media must be also taken into account.

Paper Details

Date Published: 19 October 2001
PDF: 9 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444976
Show Author Affiliations
Eugene G. Tsvetkov, Institute of Mineralogy and Petrography (Russia)
Victor I. Tyurikov, Institute of Mineralogy and Petrography (Russia)
Vladimir N. Semenenko, Institute of Mineralogy and Petrography (Russia)

Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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