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Proceedings Paper

III-V-semiconductor-based surface-micromachined catilevers for micro-opto-electro-mechanical systems
Author(s): Jin Mao; Hua Tong; Dan Zhou; Zhensheng Jia; Jianhua Wang; Shizhong Xie
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Paper Abstract

Surface micromachining processes based on III-V compound semiconductors are presented in this paper, in order to develop Micro-Opto-Electro-Mechanical systems (MOEMS). By fabricating micro cantilevers composed of seven InP/Air gap pairs, the major techniques of the surface micromachining are studied, including non-selective and selective etching, rinsing and drying. A severe problem of the sticking phenomena during rinsing and drying is avoided by the implementation of the Critical Point Drying (CPD) method.

Paper Details

Date Published: 19 October 2001
PDF: 6 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444972
Show Author Affiliations
Jin Mao, Tsinghua Univ. (China)
Hua Tong, Tsinghua Univ. (China)
Dan Zhou, Tsinghua Univ. (China)
Zhensheng Jia, Tsinghua Univ. (China)
Jianhua Wang, Tsinghua Univ. (China)
Shizhong Xie, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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