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Proceedings Paper

1.3 um GaInNAs/GaAs multiple quantum wells resonant-cavity-enhanced photodetectors
Author(s): Wei Zhang; Zhong Pan; Lianhe Li; Ruikang Zhang; Yaowang Lin; Rong Han Wu
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Paper Abstract

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 μm with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-μm diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Paper Details

Date Published: 19 October 2001
PDF: 7 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444967
Show Author Affiliations
Wei Zhang, Institute of Semiconductors (China)
Zhong Pan, Institute of Semiconductors (China)
Lianhe Li, Institute of Semiconductors (China)
Ruikang Zhang, Beijing Univ. of Posts and Telecommunications (China)
Yaowang Lin, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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