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Proceedings Paper

Novel high-sensitivity CE-PTHPT for optical fiber communication
Author(s): Guohui Li; Ru Yang; Dejun Han; Chengzhou Ji; Shucheng Du; Eenjun Zhu; YiPing Zeng; Junming Zhou
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Paper Abstract

Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8μ+m reached 1260 and 8108. The input noise current calculated is 5.46*10^-16 A/Hz^1/2. For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174μ+w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3μ+w at the wavelength of 1.55μ+m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.

Paper Details

Date Published: 19 October 2001
PDF: 4 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444966
Show Author Affiliations
Guohui Li, Beijing Normal Univ. (China)
Ru Yang, Beijing Normal Univ. (China)
Dejun Han, Beijing Normal Univ. (China)
Chengzhou Ji, Beijing Normal Univ. (China)
Shucheng Du, Beijing Normal Univ. (China)
Eenjun Zhu, Beijing Normal Univ. (China)
YiPing Zeng, Institute of Semiconductors (China)
Junming Zhou, Institute of Physics (China)

Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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