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Proceedings Paper

Epitaxial lateral overgrowth of GaN by HVPE and MOVPE
Author(s): Rong Zhang; Shulin Gu; Dianqing Lu; Bo Shen; Yi Shi; Ling Zhang; Thomas F. Kuech; Marek P. Boleslawski; T. S. Kuan; Youdou Zheng
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Paper Abstract

Epitaxial lateral overgrowth (ELO) of GaN on SiO2 masked (0001) GaN substrate has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy and metalorganic vapor phase epitaxy with diethylgallium chloride as the Ga source. It has been found that both the lateral and vertical growth rate, and geometric morphology of lateral overgrown GaN prisms are dependent on growth conditions (growth temperature and V/III ratio) and orientations. A high growth temperature and low V/III ratio is helpful to increase the lateral growth rate and flatten the top c-plane of GaN prisms. High quality coalesced flat-top ELO GaN has been fabricated by HVPE and no void is observable at the coalescence interface.

Paper Details

Date Published: 19 October 2001
PDF: 7 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444965
Show Author Affiliations
Rong Zhang, Nanjing Univ. (China)
Shulin Gu, Nanjing Univ. (China)
Dianqing Lu, Nanjing Univ. (China)
Bo Shen, Nanjing Univ. (China)
Yi Shi, Nanjing Univ. (China)
Ling Zhang, Univ. of Wisconsin/Madison (United States)
Thomas F. Kuech, Univ. of Wisconsin/Madison (United States)
Marek P. Boleslawski, Aldrich Chemical (United States)
T. S. Kuan, SUNY/Albany (United States)
Youdou Zheng, Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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