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Proceedings Paper

Optical characterization of the Ge/Si (001) islands in multilayer structure
Author(s): Changjun Huang; Yuhua Zuo; Cheng Li; Daizong Li; Buwen Cheng; Liping Luo; Jinzhong Yu; Qiming Wang
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Paper Abstract

We show that the observed temperature dependence of the photoluminescence(PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

Paper Details

Date Published: 19 October 2001
PDF: 7 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444962
Show Author Affiliations
Changjun Huang, Institute of Semiconductors (China)
Yuhua Zuo, Institute of Semiconductors (China)
Cheng Li, Institute of Semiconductors (China)
Daizong Li, Institute of Semiconductors (China)
Buwen Cheng, Institute of Semiconductors (China)
Liping Luo, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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