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Proceedings Paper

Normal-incidence near-1.55-um Ge quantum dot photodetectors on Si substrate
Author(s): Song Tong; Jian-Lin Liu; Jun Wan; R. Faez; V. Pouyet; Kang Lung Wang
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Paper Abstract

The development of Si-based photodetectors is very important due to their compatibility with the state-of-the-art Si planar technology. Photodetectors based on Ge quantum dots were studied. Three p-i-n structures containing Ge dots were grown by molecular beam epitaxy in Stranski-Krastanov mode. The dots were grown embedded in Si spacing layers on Si (100) substrates. The nominal Ge growth thickness in each layer was 1.2, 1.5 and 1.8 nm for the three samples, respectively. Photoluminescence measurement showed that the Ge dot related peak shift to lower energy with increasing the dot layer thickness. The materials were processed into p-i-n photodiodes with conventional processing methods. I-V measurement showed a low dark current density of 3x10-5A/cm2 at -1 V. A strong photoresponse at 1.3-1.55 mm originating from Ge dots was observed. The response peak shifts with the Ge growth thickness. At normal incidence, an external quantum efficiency of 8% was achieved at 2.5 V. The dot layers were considered to trap the light in the intrinsic region, and thus increase the absorption.

Paper Details

Date Published: 19 October 2001
PDF: 9 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444961
Show Author Affiliations
Song Tong, Univ. of California/Los Angeles (United States)
Jian-Lin Liu, Univ. of California/Los Angeles (United States)
Jun Wan, Univ. of California/Los Angeles (United States)
R. Faez, Univ. of California/Los Angeles (United States)
V. Pouyet, Univ. of California/Los Angeles (United States)
Kang Lung Wang, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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