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Proceedings Paper

Selective intermixing of Ga(In)NAs/GaAs quantum well structures using SiO2 encapsulation and rapid thermal annealing
Author(s): Yinqiang Xu; Lianhe Li; Zhong Pan; Yaowang Lin; Qiming Wang
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Paper Abstract

The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650íµ and 900íµ. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.

Paper Details

Date Published: 19 October 2001
PDF: 8 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444956
Show Author Affiliations
Yinqiang Xu, Institute of Semiconductors (China)
Lianhe Li, Institute of Semiconductors (China)
Zhong Pan, Institute of Semiconductors (China)
Yaowang Lin, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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