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Proceedings Paper

Experimental demonstration of all-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier
Author(s): Horacio Soto; Joseph Topomonzo; Didier Erasme; George Guekos
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Paper Abstract

In this communication, we demonstrate experimentally a new design for all-optical AND and NAND gates operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. The efficiency of this effect was estimated by measuring the conversion coefficients indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam. The all-optical gates here described differ from other ones developed before using semiconductor optical amplifiers by their ability to operate on non-degenerate input signals with an output signal wavelength independent of the input signals wavelength.

Paper Details

Date Published: 19 October 2001
PDF: 8 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444953
Show Author Affiliations
Horacio Soto, CICESE (Mexico)
Joseph Topomonzo, Ecole Nationale Superieure des Telecommunications (France)
Didier Erasme, Ecole Nationale Superieure des Telecommunications (France)
George Guekos, Swiss Federal Institute of Technology (Switzerland)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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