Share Email Print

Proceedings Paper

OPFET-LAOS: a new optoelectronic integrated device for light amplifying optical switch
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A new optoelectronic integrated device composed of an Optical Field Effect Transistor (OPFET) in series with a double heterojunction light emitting diode (LED) or a laser liode (LD) which can be used as a Light Amplifying Optical Switch (LAOS), is presented in this paper. We shall call this device as OPFET-LAOS since it is a new one in its category. Theoretical investigation has been carried out to develop the I-V characteristic of the proposed device. It is shown theoretically that the device changes its state form a low current (i.e. high impedance) state to a high current (i.e. low impedance) state through a region of negative differential resistance (NDR) when the applied voltage exceeds a certain limit, called the breakover voltage. Thus, the I-V characteristic of the device is similar to that of an existing LAOS composed of a heterojunction phototransistor (HPT) in series with a double heterojunction LED (or LD).

Paper Details

Date Published: 19 October 2001
PDF: 10 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444952
Show Author Affiliations
Satyabrata Jit, Banaras Hindu Univ. (India)
B. B. Pal, Banaras Hindu Univ. (India)

Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

© SPIE. Terms of Use
Back to Top