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Proceedings Paper

Novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth
Author(s): Ruiying Zhang; Jie Dong; Fan Zhou; Hongliang Zhu; H. Y. Shu; J. Bian; L. F. Wang; H. L. Tian; Wei Wang
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Paper Abstract

A novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of graded tensile strained bulk-like structure, which can not only enhance TM mode material gain and further realize polarization-insensitivity, but also get a large 3dB bandwidth due to different strain introduced into the active layer. 3dB bandwidth more than 40nm, 65nm has been obtained in the experiment and theory, respectively. The characteristics of such polarization insensitive structure have been analyzed. The influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed.

Paper Details

Date Published: 19 October 2001
PDF: 8 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444950
Show Author Affiliations
Ruiying Zhang, Institute of Semiconductors (China)
Jie Dong, Institute of Semiconductors (China)
Fan Zhou, Institute of Semiconductors (China)
Hongliang Zhu, Institute of Semiconductors (China)
H. Y. Shu, Institute of Semiconductors (China)
J. Bian, Institute of Semiconductors (China)
L. F. Wang, Institute of Semiconductors (China)
H. L. Tian, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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