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Proceedings Paper

1.3 um GaInNAs/GaAs quantum well lasers and photodetectors
Author(s): Zhong Pan; Yaowang Lin; Lianhe Li; Yinqiang Xu; Wei Zhang; Rong Han Wu
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Paper Abstract

The growth of GaInNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 (m at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 (m GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.

Paper Details

Date Published: 19 October 2001
PDF: 5 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444943
Show Author Affiliations
Zhong Pan, Institute of Semiconductors (China)
Yaowang Lin, Institute of Semiconductors (China)
Lianhe Li, Institute of Semiconductors (China)
Yinqiang Xu, Institute of Semiconductors (China)
Wei Zhang, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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