Share Email Print
cover

Proceedings Paper

Recent progress of 10Gb/s laser diodes for metropolitan area networks
Author(s): Toshitaka Aoyagi; Tadashi Nishimura; Etsuji Omura
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We have proved that short cavity length and large optical feedback structure can improve the relaxation oscillation frequency (fr) of 1.3mm directly modulated LDs for 10Gb/s operation. By this improvement, 1.3mm InGaAsP l/4 phase shifted distributed-feedback LDs (l/4 DFB-LDs) and 1.3mm AlGaInAs Fabry-Perot (FP)-LDs successfully revealed excellent transmission with small power penalty of 0.6dB at 70 oC for +40ps/nm wavelength dispersion and 1.5dB at 85oC for +10ps/nm one, respectively. It has been also proved that 1.55mm electro-absorption modulator integrated with DFB-LDs (EAM DFB-LDs) with MQW absorption layers are more suitable for 100km transmission than those with bulk ones, which originates from the difference of extinction curves. Transmission characteristics using 100km SMF of 1.55mm EAM DFB-LD with an MQW absorption layer has been realized with power penalty of 1.3dB. These devices can cover all optical lines of various distances in metropolitan area networks.

Paper Details

Date Published: 19 October 2001
PDF: 8 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444942
Show Author Affiliations
Toshitaka Aoyagi, Mitsubishi Electric Corp. (Japan)
Tadashi Nishimura, Mitsubishi Electric Corp. (Japan)
Etsuji Omura, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

© SPIE. Terms of Use
Back to Top