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Proceedings Paper

Transient responding characteristics of semiconductor bistable amplifier
Author(s): Tingwan Wu; Zhaosheng Zhu
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Paper Abstract

In this paper we present the results of theoretical analysis and numerical analogue on the transient characteristics of a semiconductor system responding to the incident signal field, especially for the situations in which the system is with lasing effect and display a novel increasing absorption bistable state. The results appear some different features with that of other known bistable device and lasers. These results may be available to a class of excitonic bistable lasing systems.

Paper Details

Date Published: 19 October 2001
PDF: 5 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444939
Show Author Affiliations
Tingwan Wu, South China Univ. of Technology (China)
Zhaosheng Zhu, South China Univ. of Technology (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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