Share Email Print

Proceedings Paper

Transient responding characteristics of semiconductor bistable amplifier
Author(s): Tingwan Wu; Zhaosheng Zhu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper we present the results of theoretical analysis and numerical analogue on the transient characteristics of a semiconductor system responding to the incident signal field, especially for the situations in which the system is with lasing effect and display a novel increasing absorption bistable state. The results appear some different features with that of other known bistable device and lasers. These results may be available to a class of excitonic bistable lasing systems.

Paper Details

Date Published: 19 October 2001
PDF: 5 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444939
Show Author Affiliations
Tingwan Wu, South China Univ. of Technology (China)
Zhaosheng Zhu, South China Univ. of Technology (China)

Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

© SPIE. Terms of Use
Back to Top