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Proceedings Paper

Efficient passivation and size control of Si nanograins with stable photoluminescence
Author(s): Wei Yu; Huijing Du; She Qiang Li; Guangsheng Fu
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Paper Abstract

The Si-rich a-SiNx films are synthesized by pulsed laser ablation of silicon target under NH3 atmosphere. By using laser-induced crystallization technique, the fabrication of nc-Si embedded in the SiNx is also realized. The crystallinity and microstructure of the films after laser annealing are characterized by scanning electron microscopy and micro-Raman spectroscopy. Additionally, in order to investigate the role of the SiNx on protecting the nc-Si from the oxidation in the air, the energy diffraction X-ray spectrum is also carried out. By photoluminescence (PL) spectrum measurement, the PL peak blue shifting is observed at room temperature. The results suggest that nc-Si embedded in the silicon nitride could be effectively passivated and stable PL of nasnosilicon grains could be obtained.

Paper Details

Date Published: 19 October 2001
PDF: 4 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444937
Show Author Affiliations
Wei Yu, Hebei Univ. (China)
Huijing Du, Hebei Univ. (China)
She Qiang Li, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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