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Proceedings Paper

High-power 940-nm laser arrays with nonabsorbing facets
Author(s): Yi Qu; Baoxue Bo; Xin Gao; Xingde Zhang; Jiawei Shi
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Paper Abstract

In this paper, through the analysis and in consideration of the facts which influence on the ultimate output power of semiconductor laser. we report a novel 940nm semiconductor laser array structure with nonabsorbing facets to avoid the COMD on facets. The 940nm laser wafers are grown by MBE. The lasers were cleaved into cm bars. We have made a new design variant of laser array with nonabsorbing facets and coated high-and low-reflectivity coating (approx.95% and 5%). The emission wavelength of the laser arrays is 939nm. Continuous wave (CW) output power of 15 W has been achieved.

Paper Details

Date Published: 19 October 2001
PDF: 3 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444929
Show Author Affiliations
Yi Qu, Jilin Univ. and Changchun Institute of Optics and Fine Mechanics (China)
Baoxue Bo, Jilin Univ. and Changchun Institute of Optics and Fine Mechanics (China)
Xin Gao, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Jiawei Shi, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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