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Proceedings Paper

Theoretical analysis of R0A product in HgCdTe loophole p-n junction
Author(s): Suxia Xing; Yi Cai; Benkang Chang
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Paper Abstract

Neglecting the effect of generation-recombination (G-R) current, tunneling current, and surface leakage current, a loophole p-n junction current and R0A expression is developed in this paper. The R0A characteristic varying with temperature and long-wavelength is carried out for 77- 150K temperature range. The curve indicates that the detectors are applicable at 8-10.4micrometers wavelength range for 120K and ever low temperature, but only when the temperature is below 100K, 10~14micrometers wavelength detectors can be used. These results are agree well with that of planar p-n junction's theoretical upper limit. Finally, according with the dependence of G-R current and diffusion current on temperature, the characteristic and function are set up between temperature and composition which equate the generation-recombination current to diffusion current.

Paper Details

Date Published: 19 October 2001
PDF: 9 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444927
Show Author Affiliations
Suxia Xing, Nanjing Univ. of Science and Technology (China)
Yi Cai, Kunming Research Institute of Physics (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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