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Proceedings Paper

Photoluminesence and structure character on AlGaAs/GaAs quantum well laser material
Author(s): Mei Li; Xiaowei Song; Yuxia Wang; Hui Li; Baoxue Bo
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Paper Abstract

In this paper ,high quality AlGaAs/GaAs single quantum well(SQM) structure is grown on (100) GaAs substrate by molecular beam epitaxy (MBE) system. Optical and structural characteristic of the film was studied by low temperature (10K) photoluminescence (PL) and X-ray double crystal diffraction method. Using X-ray kinematical theory, we calculated the structure parameters of each samples, the reason for the appearance of the interfering fringes and splitting peaks in double crystal rocking curve were analyse theoretically. The deep levels which affect character of the material and laser are also discussed. The experimental results show that measuring methods of the photoluminescence and X-ray double crystal diffraction are very important for testing the quality of quantum wells and improving the MBE technology.

Paper Details

Date Published: 19 October 2001
PDF: 3 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444926
Show Author Affiliations
Mei Li, Changchun Institute of Optics and Fine Mechanics (China)
Xiaowei Song, Changchun Institute of Optics and Fine Mechanics (China)
Yuxia Wang, Changchun Institute of Optics and Fine Mechanics (China)
Hui Li, Changchun Institute of Optics and Fine Mechanics (China)
Baoxue Bo, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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