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Proceedings Paper

850-nm implanted and oxide VCSELs in multigigabit data communication application
Author(s): Jin-Shan Pan; Yung-Sen Lin; Chao-Fang Alice Li; Horng-Ching Lai; Chang-Cherng Wu; Kai-Feng Huang
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Paper Abstract

In this paper, we will present the results of the 850nm implanted and oxide-confined vertical cavity surface emitting lasers in multi-Gigabit application. In TrueLight, we have a lot of experience in manufacturing VCSEL with ion-implantation and wet-oxidation technologies for single device Gigabit data transmission application. The ion-implanted VCSEL is reliable with the Mean Time To Failure (MTTF) up to 108 hours at room temperature operation. For the gigabit Ethernet data communication, it provides a very promising solution in short haul application. In transmission experiment we demonstrated the devices could be modulated up to 2.5Gbps and 3.2Gbps data rate. For oxide-confined VCSEL devices, we use wet oxidation technology to approach the device processing and get very good result to achieve the mutli-gigabit data communication application in single device form. The VCSEL device with oxide aperture around 12um could be modulated up to 2.5Gbps and 3.2Gbps. A data of employing VCSEL in high data rate POF transmission is also presented.

Paper Details

Date Published: 19 October 2001
PDF: 6 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444921
Show Author Affiliations
Jin-Shan Pan, TrueLight Corp. (Taiwan)
Yung-Sen Lin, TrueLight Corp. (Taiwan)
Chao-Fang Alice Li, TrueLight Corp. (Taiwan)
Horng-Ching Lai, TrueLight Corp. (Taiwan)
Chang-Cherng Wu, TrueLight Corp. (Taiwan)
Kai-Feng Huang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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