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Proceedings Paper

Photodamage of Zn:In:LiNbO3 crystal waveguide substrate
Author(s): Rui Wang; Xinrong Liu; Wusheng Xu; Biao Wang
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Paper Abstract

In this research, Czochralski method was used to grow Zn:In:LiNbO3 crystal. The lattice constants, ultra- visible absorption spectra, infrared absorption spectra and photodamage resistance ability of the crystal were measured. The photodamage threshold of LiNbO3 and Zn:In:LiNbO3 crystal waveguide substrate were investigated by the m-line method. It is found that the higher the concentrations of In and Zn were doped, the more the absorption band of crystal was shifted to short wave. The OH absorption peak of Zn(3mo1%):In(2mo1%):LiNbO3 and Zn(3mo1%):In(1mo1%):LiNbO3 crystal was located at about 3484 cm-1, and that of Zn(3mo1%):In(3mo1%):LiNbO3 crystal was located at about 3515 cm-1. The photodamage resistance ability of Zn(3mo1%):In(2mo1%):LiNbO3 crystal was two orders of magnitude higher than that of LiNbO3 crystal. The photodamage threshold of LiNbO3 crystal waveguide substrate and Zn:In:LiNbO3 crystal waveguide substrate were 5x103J/cm2 and 1x106J/cm2, respectively.

Paper Details

Date Published: 19 October 2001
PDF: 5 pages
Proc. SPIE 4579, Optical Fiber and Planar Waveguide Technology, (19 October 2001); doi: 10.1117/12.444911
Show Author Affiliations
Rui Wang, Harbin Institute of Technology (China)
Xinrong Liu, Harbin Institute of Technology (China)
Wusheng Xu, Harbin Institute of Technology (China)
Biao Wang, Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 4579:
Optical Fiber and Planar Waveguide Technology
Shuisheng Jian; Yanming Liu, Editor(s)

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