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Proceedings Paper

Coplanar waveguide InP-based HEMT MMICs for microwave and millimeter wave applications
Author(s): Chia-Shing Chou; K. Litvin; Larry E. Larson; Steven E. Rosenbaum; Loi D. Nguyen; Umesh K. Mishra; Mark Lui; M. Thompson; Catherine M. H. Ngo; M. Melendes
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Paper Abstract

We have developed and fabricated a variety of single-stage coplanar waveguide MMIC amplifiers based on our InP-based AlInAs/GaInAs HEMT device technology. The measured f(t) of 0.15-micron devices was 120 GHz and fmax was 200 GHz. The dc transconductance was greater than 720 mS/mm. The 12-GHz single-stage MMIC amplifier had a noise figure of 1.3 dB with an associated gain of 16.0 dB. A 35 GHz single-stage amplifier had a measured gain of 10.9 dB and a measured input return loss of -14.4 dB. A 60 GHz single-stage amplifier had a measured gain of 8.4 dB and a measured input return loss of -18.4 dB.

Paper Details

Date Published: 1 July 1991
PDF: 6 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44490
Show Author Affiliations
Chia-Shing Chou, Hughes Research Labs. (United States)
K. Litvin, Cornell Univ. (United States)
Larry E. Larson, Hughes Research Labs. (United States)
Steven E. Rosenbaum, Hughes Research Labs. (United States)
Loi D. Nguyen, Hughes Research Labs. (United States)
Umesh K. Mishra, Univ. of California/Santa Barbara (United States)
Mark Lui, Hughes Research Labs. (United States)
M. Thompson, Hughes Research Labs. (United States)
Catherine M. H. Ngo, Hughes Research Labs. (United States)
M. Melendes, Hughes Research Labs. (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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