Share Email Print
cover

Proceedings Paper

High-efficiency Kaband monolithic pseudomorphic HEMT amplifier
Author(s): Paul Saunier; Hua Quen Tserng; Yung Chung Kao
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A monolithic three-stage Ka-band amplifier has been designed and fabricated on a doped channel heterostructure. Devices with gate length of 0.2 micron and gate width of 50, 100, and 250 micron were cascaded. The gate and drain bias networks were also integrated. The small signal gain is 31 dB and the amplifier is capable of an output power of 190 mW with 23 dB gain and 30.2 percent power added efficiency at 31 GHz. This is a record efficiency for a multistage MMIC at this frequency.

Paper Details

Date Published: 1 July 1991
PDF: 5 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44483
Show Author Affiliations
Paul Saunier, Texas Instruments Inc. (United States)
Hua Quen Tserng, Texas Instruments Inc. (United States)
Yung Chung Kao, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

© SPIE. Terms of Use
Back to Top