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Proceedings Paper

Ultralinear low-noise amplifier technology for space communications
Author(s): E. T. Watkins; Kevin Yu; Wai-Fan Yau; Chan-Shin Wu; Steve Yuan
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Paper Abstract

Methods aimed at increasing linearity of a low noise amplifier with specified 1-dB compression point using the spike doped MESFETs are described. Particular attention is given to the effects of FET device parameters on the third order intermodulation (IM3), an MBE spike doped MESFET, spike doped MESFET characteristics, and a three-stage MMIC amplifier. It is concluded that the IM3 can be significantly reduced by choosing the appropriate device and operating the amplifier with optimized device parameters.

Paper Details

Date Published: 1 July 1991
PDF: 11 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44481
Show Author Affiliations
E. T. Watkins, Hughes Aircraft Co. (United States)
Kevin Yu, Hughes Aircraft Co. (United States)
Wai-Fan Yau, Hughes Aircraft Co. (United States)
Chan-Shin Wu, Hughes Aircraft Co. (United States)
Steve Yuan, Hughes Aircraft Co. (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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