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Proceedings Paper

Accurate design of multiport low-noise MMICs up to 20 GHz
Author(s): David Willems; I. Bahl; Edward L. Griffin
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Paper Abstract

This paper presents a novel noise parameter extraction technique for MESFETs. All measurements are done with a 50 ohm source and load which allow the FET to be characterized on wafer easily, accurately and quickly. The noise parameter values are extracted using an in-house model extraction CAD tool. This technique has been validated by comparison to noise parameters measured by using tuners. Additionally, LNAs, distributed and feedback amplifier MMICs have been tested and demonstrated excellent correlations between the measured and simulated noise performance up to 20 GHz.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44480
Show Author Affiliations
David Willems, ITT Gallium Arsenide Technology Ctr. (United States)
I. Bahl, ITT Gallium Arsenide Technology Ctr. (United States)
Edward L. Griffin, ITT Gallium Arsenide Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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