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Proceedings Paper

Ninety-four GHz InAlAs/InGaAs/InP HEMT low-noise down-converter
Author(s): P. Daniel Chow; K. L. Tan; Dwight C. Streit; D. Garske; Po-Hsin P. Liu; Huan-Chun Yen
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Paper Abstract

We have fabricated an integrated W-band downconverter using 0.15 micron T-gate lattice-matched InGaAs/InP High Electron Mobility Transistor. The two-stage MIC LNA demonstrated record performance with a minimum noise figure of 3.0 dB and 16.5 dB associated gain at 93 GHz. The active InP HEMT mixer showed 2.4 dB conversion gain and 7.3 dB noise figure at 94 GHz. This is the first reported active mixer conversion gain at W-band. The complete downconverter exhibited 3.6 dB noise figure and 17.8 dB conversion gain at the waveguide input. These state-of-the-art performances demonstrate that a complete W-band MMIC downconverter chip with extremely low noise figure and high conversion gain can be fabricated on the same wafer using the InP HEMT technology.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44479
Show Author Affiliations
P. Daniel Chow, TRW Electronic Systems Group (United States)
K. L. Tan, TRW Electronic Systems Group (United States)
Dwight C. Streit, TRW Electronic Systems Group (United States)
D. Garske, TRW Electronic Systems Group (United States)
Po-Hsin P. Liu, TRW Electronic Systems Group (United States)
Huan-Chun Yen, TRW Electronic Systems Group (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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