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Proceedings Paper

InGaAs HEMT MMIC low-noise amplifier and doublers for EHF SATCOM ground terminals
Author(s): P. Daniel Chow; J. Lester; P. Huang; William L. Jones
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Paper Abstract

A K-band MMIC LNA and a family of MMIC frequency doublers were designed and fabricated using the planar-doped pseudomorphic InGaAs HEMT technology for future EHF satellite communication terminal transceiver applications. The InGaAs HEMT LNA showed less than 2 dB noise figure and more than 32 dB gain from 21 to 23 GHz. The Ku-, K-, and Q-band MMIC HEMT doublers demonstrated low conversion loss and wideband operation. They showed 10 dBm, 8 dBm, and 0 dBm output powers, and 2.5 dB, 4.5 dB, and 8.6 dB conversion losses at 17.4 GHz, 22.25 GHz, and 43.5 GHz, respectively.

Paper Details

Date Published: 1 July 1991
PDF: 6 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44478
Show Author Affiliations
P. Daniel Chow, TRW Electronic Systems Group (United States)
J. Lester, TRW Electronic Systems Group (United States)
P. Huang, TRW Electronic Systems Group (United States)
William L. Jones, TRW Electronic Systems Group (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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