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Proceedings Paper

Ultra-high-frequency InP-based HEMTs for millimeter wave applications
Author(s): Paul T. Greiling; Loi D. Nguyen
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Paper Abstract

InP-based (AlInAs/GaInAs) high electron mobility transistors (HEMTs) have demonstrated a substantial performance improvement over GaAs-based devices. HEMTs with extrinsic f(T) over 200 GHz, fmax over 300 GHz, and amplifiers with extremely low noise figures and high associated gain have been achieved. A review of the status of this device technology and projections for high performance microwave and millimeter-wave applications will be discussed.

Paper Details

Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44477
Show Author Affiliations
Paul T. Greiling, Hughes Research Labs. (United States)
Loi D. Nguyen, Hughes Research Labs. (United States)


Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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