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Proceedings Paper

Polysilicon micromachined switch
Author(s): Zhengyuan Zhang; Zhiyu Wen; Shilu Xu; Kaicheng Li; Zhengfan Zhang; Shanglian Huang
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Paper Abstract

LPCVD SiO2 and polysilicon being used as sacrificial layer and cantilever respectively, a polysilicon micromachined RF switch has been fabricated. In the process the stress of polysilicon is released to prevent polysilicon membrane from bending. The switch offers the potential for building a new fully monolithic integrated RF MEMS for radar and communications applications.

Paper Details

Date Published: 15 October 2001
PDF: 4 pages
Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444756
Show Author Affiliations
Zhengyuan Zhang, Chongqing Univ. (China)
Zhiyu Wen, Chongqing Univ. (China)
Shilu Xu, Sichuan Institute of Solid State Circuits (China)
Kaicheng Li, Sichuan Institute of Solid State Circuits (China)
Zhengfan Zhang, Sichuan Institute of Solid State Circuits (China)
Shanglian Huang, Chongqing Univ. (China)


Published in SPIE Proceedings Vol. 4601:
Micromachining and Microfabrication Process Technology and Devices

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