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Proceedings Paper

Wheastone-bridge-type MR sensors of Si(001)/NiO(300 A)/NiFe bilayer system
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Paper Abstract

Great interest is given in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO(300A)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300A)/NiFe(450A) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45 degree(s) Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300A)/NiFe(450A) was shown in the range of about +/- 50 Oe.

Paper Details

Date Published: 15 October 2001
PDF: 9 pages
Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444738
Show Author Affiliations
Jae Sung Song, Korea Electrotechnology Research Institute (South Korea)
Won Jae Lee, Korea Electrotechnology Research Institute (South Korea)
Bok Ki Min, Korea Electrotechnology Research Institute (China)
Gwiy-Sang Chung, Dongseo Univ. (South Korea)


Published in SPIE Proceedings Vol. 4601:
Micromachining and Microfabrication Process Technology and Devices

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