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Angular-dependent magnetoresistance characteristics in Si(001)/NiO(300 A)/NiFe(t) bilayer system
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Paper Abstract

Angular-dependent magnetoresistance characteristics in Si(001)/NiO(300A)/NiFe(tequals450, 1000, 1350A) thin films was investigated in terms of an angle between current and applied magnetic field. The samples were grown by RF-sputtering and DC-sputtering methods on naturally oxidised Si(001) substrates. First, NiO layer(300A) was grown on Si substrate, followed by the deposition of NiFe layers as a function of NiFe thickness under the condition of in-situ magnetic bias-field of approximately 500G. The measurement of angular magnetoresistance in Si(001)/NiO(300A)NiFe(tequals450, 1000, 1350A) thin films were carried out in variation of an angle between current direction and external magnetic field. Also, on the base of single magnetic domain model, the comparison between the measured and the calculated MR profiles was made. For tNiFe equals 450A, symmetrical MR characteristics were observed as sweeping external magnetic field proceed. However, for tNiFe equals 1000A, asymmetric MR profiles were shown.

Paper Details

Date Published: 15 October 2001
PDF: 7 pages
Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444737
Show Author Affiliations
Won Jae Lee, Korea Electrotechnology Research Institute (South Korea)
Jae Sung Song, Korea Electrotechnology Research Institute (South Korea)
Bok Ki Min, Korea Electrotechnology Research Institute (China)
Gwiy-Sang Chung, Dongseo Univ. (South Korea)

Published in SPIE Proceedings Vol. 4601:
Micromachining and Microfabrication Process Technology and Devices

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