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Proceedings Paper

Capacitive humidity sensor in CMOS technology
Author(s): Xian-Wei Yan; Ming Qin; Qing-An Huang
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Paper Abstract

An integrated relative humidity sensor that combines a capacitive sensor with CMOS measurement circuitry on the same silicon chip has been designed, fabricated and tested. The device provides square wave. Its frequency varies with humidity over the entire range from 0% to 100%. The sensor element, which is an integrated part of the circuit, is an interdigital lateral capacitance structure formed by the aluminium layers of the CMOS process.

Paper Details

Date Published: 15 October 2001
PDF: 5 pages
Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444724
Show Author Affiliations
Xian-Wei Yan, Southeast Univ. (China)
Ming Qin, Southeast Univ. (China)
Qing-An Huang, Southeast Univ. (China)


Published in SPIE Proceedings Vol. 4601:
Micromachining and Microfabrication Process Technology and Devices

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