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Proceedings Paper

Absorption and emission properties of F-center-OH- defect pairs in cesium halides
Author(s): Chunyang Kong; Y. Ma; M. D. Dong; Wanlu Wang; Kejun Liao; J. Xu
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Paper Abstract

Based on the single electron Hartree-Fock appropriation and extended-ions method, the optical absorption and emission properties of F-center-OH defect pairs (FH(OH)) is CsCl, CsBr and CsI were investigated in which a polar effect of F- center electron in excited state was considered. The calculated results show the association of F-center and OH substitution ions on (100) next-nearest-neighbor positions in CsCl, CsBr, and CsI forms a new stable defect FH(OH). The neighboring OH ion splits the pure F-center absorption band into widely separated FH(1) and FH(2) electronic absorption polarized parallel and perpendicular to the pair axis. Moreover, the neighboring OH ion quenched the emission in CsCl, but creates strong emission in CsBr and CsI. The theoretical results were in good agreement with the experimental data. A possible mechanism was presented to explain the emission in CsBr and CsI but quenched in CsCl.

Paper Details

Date Published: 15 October 2001
PDF: 8 pages
Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444711
Show Author Affiliations
Chunyang Kong, Chongqing Normal College (China)
Y. Ma, Chongqing Normal College (China)
M. D. Dong, Chongqing Normal College (China)
Wanlu Wang, Chongqing Univ. (China)
Kejun Liao, Chongqing Univ. (China)
J. Xu, Chongqing Univ. (China)

Published in SPIE Proceedings Vol. 4601:
Micromachining and Microfabrication Process Technology and Devices
Norman C. Tien; Qing-An Huang, Editor(s)

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