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Proceedings Paper

Numerical modeling of a SiN beam resonant pressure sensor
Author(s): Deyong Chen; Dafu Cui; Li Wang; Zhongyao Yu
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Paper Abstract

Numerical modeling of a SiN beam resonant pressure sensor is presented. The SiN beam is electrothermally excited and sensed by a piezoresistive thin film detector. In order to predict its exact performance and to optimize the design, the commercial FEA software is used to analyze the SiN beam resonant pressure sensor. Computer simulation is carried out on temperature distribution, resonant frequency shift due to thermal stress, effect of heater/detector elements on the natural resonance frequency, design of diaphragm geometry, and sensitivity of pressure measurement. The resonant pressure sensor has been fabricated using porous silicon sacrificial layer technology and measured both in vacuum and in air. There is a satisfactory agreement between computer simulation and experimental results.

Paper Details

Date Published: 15 October 2001
PDF: 8 pages
Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444702
Show Author Affiliations
Deyong Chen, Institute of Electronics (China)
Dafu Cui, Institute of Electronics (China)
Li Wang, Institute of Electronics (China)
Zhongyao Yu, Institute of Electronics (China)


Published in SPIE Proceedings Vol. 4601:
Micromachining and Microfabrication Process Technology and Devices

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