A silicon microchannel plate (Si-MCP), with 15-25 aspect ratio of the microchannel, 6-20 microns diameter and 6-8 microns space, was prepared by Inductively Coupled Plasma (ICP) and LPCVD. The inner surface topography of microchannel was surveyed, the bulk resistance 7.3 mega ohm and electron gain 110 of MCP were tested by ultraviolet optoelectronic method. The plasma-etching lag in processing the microchannel array was analyzed and discussed. Finally, we compared the electron gain of silicon microchannel plate with traditional glass one. Our work proved the feasibility of making Si-MCP by microfabrication and semiconductor process.

Date Published: 15 October 2001
PDF: 4 pages
Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444697

Published in SPIE Proceedings Vol. 4601:
Micromachining and Microfabrication Process Technology and Devices