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Proceedings Paper

Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions
Author(s): Yanfeng Jiang; Qing-An Huang
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Paper Abstract

In this article, the roughness mechanism of silicon after etching in aqueous potassium hydroxide solutions is proposed. There should exist difference between roughness mechanism and anisotropic mechanism. A parameter just being analog to the surface activation energy is proposed for etching solution. Combining this parameter and the three main crystal planes activation energy, the roughness can be estimated. So, authors believe that it is the surface activation energy that accounts for the surface roughness.

Paper Details

Date Published: 15 October 2001
PDF: 6 pages
Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444695
Show Author Affiliations
Yanfeng Jiang, Southeast Univ. (China)
Qing-An Huang, Southeast Univ. (China)


Published in SPIE Proceedings Vol. 4601:
Micromachining and Microfabrication Process Technology and Devices

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