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Proceedings Paper

1/f noise in semiconductor heterostructure laser diodes
Author(s): Jung Il Lee; Il Ki Han; Won Jun Choi; Jean Brini; Alain Chovet
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Paper Abstract

A new model for electrical low frequency noise in semiconductor heterostructure laser diodes is developed based on number fluctuation theory. The model includes carrier number fluctuation mechanisms such as thermal activation, tunneling and random walk involving bulk traps and interface traps at the heterojunction interface. Noise sources in heterostructure semiconductor laser diodes can be divided into three parts, namely, series resistance including ohmic contacts, p-n junction and the heterojunction. The traps located at the interface and or at the bulk of the barrier layer can induce the modulation of barrier height which in turn results in the current fluctuation. Noise generation mechanisms for p-n junction is reviewed. Correlation between electrical and optical noise is also discussed.

Paper Details

Date Published: 15 October 2001
PDF: 9 pages
Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444683
Show Author Affiliations
Jung Il Lee, Korea Institute of Science and Technology (South Korea)
Il Ki Han, Korea Institute of Science and Technology (South Korea)
Won Jun Choi, Korea Institute of Science and Technology (South Korea)
Jean Brini, Ecole Nationale Superieure d'Electronique et de Radioelectricite de Grenoble (France)
Alain Chovet, Ecole Nationale Superieure d'Electronique et de Radioelectricite de Grenoble (France)


Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology

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